Pregled bibliografske jedinice broj: 319619
Tellurium related deep traps in silicon
Tellurium related deep traps in silicon // Semiconductor Silicon / Harbeke, G ; Schulz, MJ (ur.).
Berlin : New York: Springer, 1989. str. 153-158
CROSBI ID: 319619 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Tellurium related deep traps in silicon
Autori
Desnica, Dunja ; Desnica, Uroš V.
Vrsta, podvrsta i kategorija rada
Poglavlja u knjigama, znanstveni
Knjiga
Semiconductor Silicon
Urednik/ci
Harbeke, G ; Schulz, MJ
Izdavač
Springer
Grad
Berlin : New York
Godina
1989
Raspon stranica
153-158
ISBN
0-387-51073-7
Ključne riječi
deep level transient spectroscopy; deep levels; elemental semiconductors; Hall effect; Mossbauer effect; Rutherford backscattering; silicon; tellurium
Sažetak
The authors study the properties of Te deep levels in Si. They discuss the results obtained by previous authors for Hall effect, DLTS and IR spectroscopy studies and also analyse data from earlier Mossbauer effect and Rutherford backscattering analyses (21 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Napomena
Izdanje u NY ima ISBN: 0-387-51073-7
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
