Pregled bibliografske jedinice broj: 319470
The method of indirect doping of crystals.
The method of indirect doping of crystals. // Institute of Physics Conference Series, 43 (1979), 521-524 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 319470 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
The method of indirect doping of crystals.
Autori
Desnica, Uroš V
Izvornik
Institute of Physics Conference Series (0305-2346) 43
(1979);
521-524
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
indirect doping; crystals; implantation; radioactive ions; GaN; II-VI semiconductors; Tl; Si; radioactive Pb ion implantation.
Sažetak
The method of indirect doping based on implantation of short-life radioactive ions is proposed and analysed. Some applications are discussed: (a) the possibility of avoiding of self-compensation in GaN and II-VI semiconductors and (b) the investigation of Tl behaviour in Si by means of radioactive Pb ion implantation (8 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
