Pregled bibliografske jedinice broj: 319468
Method of growing of p-type GaN in nonequilibrium conditions
Method of growing of p-type GaN in nonequilibrium conditions // Physical Review. B, 15 (1977), 8; 4119-4120 (međunarodna recenzija, članak, znanstveni)
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Naslov
Method of growing of p-type GaN in nonequilibrium conditions
Autori
Desnica, Uroš V. ; Urli, Natko B. ; Etlinger, Božidar
Izvornik
Physical Review. B (0556-2805) 15
(1977), 8;
4119-4120
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
radioactive neutral impurity; p-GaN; growth in nonequilibrium conditions; decaying to acceptor species; III-V semiconductors
Sažetak
At present it is impossible to produce p-type GaN as the lattice `self-compensates' by producing a negatively charged vacancy for each acceptor impurity atom introduced. The authors suggest that doping with a radioactive neutral impurity that subsequently decays into an acceptor species might result in a p-type sample that is stable thereafter (8 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
