Pregled bibliografske jedinice broj: 319448
Metastable complex defects in a-(Al0.02In0.98 )2Se3
Metastable complex defects in a-(Al0.02In0.98 )2Se3 // Journal of physics and chemistry of solids, 46 (1985), 5; 545-550 doi:10.1016/0022-3697(85)90216-1 (međunarodna recenzija, članak, znanstveni)
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Naslov
Metastable complex defects in a-(Al0.02In0.98 )2Se3
Autori
Desnica, Dunja ; Desnica, Uroš V.
Izvornik
Journal of physics and chemistry of solids (0022-3697) 46
(1985), 5;
545-550
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
aluminium compounds ; annealing ; Hall effect ; impurity-defect interactions ; indium compounds ; semiconductor materials
Sažetak
The electrical properties of a-(Al0.02In0.98 )2Se3 were investigated. In contrast to In 2Se3, which is characterized by a high and constant concentration of donorlike defect centers, the concentration of active donors in a-(Al0.02In0.98)2Se3 can be changed in a reversible manner over four orders of magnitude by thermal treatment. To explain this strange behavior, the authors have proposed a simple model, which presumes formation of complex defect centers consisting of Al atoms at cation sites and native donors (16 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
