Pregled bibliografske jedinice broj: 319439
"Antisite" incorporation of Sb dopant in GaN
"Antisite" incorporation of Sb dopant in GaN // Solid state communications, 60 (1986), 1; 59-62 doi:10.1016/0038-1098(86)90016-5 (međunarodna recenzija, članak, znanstveni)
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Naslov
"Antisite" incorporation of Sb dopant in GaN
Autori
Desnica, Uroš V. ; Ravi, N. ; Andreasen, H. ; de Waard, H.
Izvornik
Solid state communications (0038-1098) 60
(1986), 1;
59-62
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
antimony ; gallium compounds ; III-V semiconductors ; Mossbauer effect ; point defects
Sažetak
Radioactive 119Sb was implanted in an undoped GaN single crystal and Mossbauer spectra were taken of the 23.8 keV gamma rays of 119Sn emitted in its decay. A comparison with Mossbauer spectra of 119Sb implanted in other III-V compounds leads to the conclusion that Sb in GaN lands in the Ga site in contrast to all common III-V compounds, where Sb occupies the anion site. Calculations of electronegativity differences for Sb incorporation in either Ga or N site support the interpretation of the experimental data (12 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- INSPEC
