Pregled bibliografske jedinice broj: 319430
Distribution coefficient of carbon in melt-grown GaAs
Distribution coefficient of carbon in melt-grown GaAs // Journal of applied physics, 62 (1987), 9; 3639-3642 doi:10.1063/1.339242 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 319430 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Distribution coefficient of carbon in melt-grown GaAs
Autori
Desnica, Uroš V. ; Cretella, M.C. ; Pawlowicz, L.M. ; Lagowski, Jacek
Izvornik
Journal of applied physics (0021-8979) 62
(1987), 9;
3639-3642
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
carbon ; crystal growth from melt ; gallium arsenide ; III-V semiconductors ; impurity distribution ; semiconductor growth
Sažetak
The results of a detailed investigation of the distribution coefficient of carbon in GaAs are reported for a series of crystals grown at different pulling rates by the liquid-encapsulated Czochralski method. From localized vibration mode absorption measurements, it was found that the concentration of carbon always decreases along the length of the ingots and that the effective distribution coefficient increases strongly with a decrease in pulling rate. The equilibrium distribution coefficient determined from present data, K0=3.5, is higher than previously reported values for the effective distribution coefficient ; however, it is consistent with chemical trends for group IV elements in GaAs (23 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
