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Pregled bibliografske jedinice broj: 319422

Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbon

Pivac, Branko; Desnica, Uroš V.
Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbon // Journal of applied physics, 64 (1988), 4; 2208-2210 doi:10.1063/1.341684 (međunarodna recenzija, članak, znanstveni)

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Naslov
Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbon

Autori
Pivac, Branko ; Desnica, Uroš V.

Izvornik
Journal of applied physics (0021-8979) 64 (1988), 4; 2208-2210

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
semiconductor ; annealing ; infrared analysis ; absorption band ; thermally unstable ; nucleation centers ; Si:SiOx ; Si:SiC ; Si:C
(semiconductor ; annealing ; infrared analysis ; absorption band ; thermally unstable ; nucleation centers ; Si:SiOx ; Si:SiC ; Si:C ; Si:SiC ; Si:C)

Sažetak
The authors report on infrared analysis of the SiOx-like defects segregated close to the surface of the edge-defined film-fed growth polycrystalline ribbons. These defects cause an absorption band very similar to that of the SiOx phase, but they are thermally unstable, and can be annealed by 650degreesC thermal treatment. It is concluded that they are quenched high-temperature defects formed during the film growth. Possible nucleation centers for those defects are found to be C and/or SiC aggregates close to the surface (15 References).

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Branko Pivac (autor)

Avatar Url Uroš Desnica (autor)

Poveznice na cjeloviti tekst rada:

Pristup cjelovitom tekstu rada doi aip.scitation.org

Citiraj ovu publikaciju:

Pivac, Branko; Desnica, Uroš V.
Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbon // Journal of applied physics, 64 (1988), 4; 2208-2210 doi:10.1063/1.341684 (međunarodna recenzija, članak, znanstveni)
Pivac, B. & Desnica, U. (1988) Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbon. Journal of applied physics, 64 (4), 2208-2210 doi:10.1063/1.341684.
@article{article, author = {Pivac, Branko and Desnica, Uro\v{s} V.}, year = {1988}, pages = {2208-2210}, DOI = {10.1063/1.341684}, keywords = {semiconductor, annealing, infrared analysis, absorption band, thermally unstable, nucleation centers, Si:SiOx, Si:SiC, Si:C}, journal = {Journal of applied physics}, doi = {10.1063/1.341684}, volume = {64}, number = {4}, issn = {0021-8979}, title = {Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbon}, keyword = {semiconductor, annealing, infrared analysis, absorption band, thermally unstable, nucleation centers, Si:SiOx, Si:SiC, Si:C} }
@article{article, author = {Pivac, Branko and Desnica, Uro\v{s} V.}, year = {1988}, pages = {2208-2210}, DOI = {10.1063/1.341684}, keywords = {semiconductor, annealing, infrared analysis, absorption band, thermally unstable, nucleation centers, Si:SiOx, Si:SiC, Si:C, Si:SiC, Si:C}, journal = {Journal of applied physics}, doi = {10.1063/1.341684}, volume = {64}, number = {4}, issn = {0021-8979}, title = {Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbon}, keyword = {semiconductor, annealing, infrared analysis, absorption band, thermally unstable, nucleation centers, Si:SiOx, Si:SiC, Si:C, Si:SiC, Si:C} }

Časopis indeksira:


  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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