Pregled bibliografske jedinice broj: 319416
Persistent photocurrents in semi-insulating gallium arsenide
Persistent photocurrents in semi-insulating gallium arsenide // Radiation Effects and Defects in Solids, 111-112 (1989), 83-90 (međunarodna recenzija, članak, znanstveni)
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Naslov
Persistent photocurrents in semi-insulating gallium arsenide
Autori
Desnica, Uroš
Izvornik
Radiation Effects and Defects in Solids (1042-0150) 111-112
(1989);
83-90
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
deep levels; gallium arsenide; III-V semiconductors; photoconductivity; thermally stimulated currents
Sažetak
Persistent photocurrents were observed in semi-insulating GaAs long after the low temperature illumination with monochromatic 0.7-1.8 eV photon was terminated. These excess conductances exceed the equilibrium dark conductances up to a factor 104. The author has found that the magnitude of this effect is dependent on the photosensitivity of the material, which is influenced by charge trapping effects. For various photosensitivity stages the concentration of the charge trapped in deep traps was determined by measuring thermally stimulated current. Good correlation between the persistent photocurrents and the total concentration of trapped charge was found. The increase of magnitude of persistent photocurrents is interpreted as the increase of lifetime of optically created free holes due to trapping of electrons, which therefore are not available for recombination (13 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
