Pregled bibliografske jedinice broj: 319412
Influence of high-temperature thermal treatment on edge-defined film-fed growth silicon
Influence of high-temperature thermal treatment on edge-defined film-fed growth silicon // Journal of applied physics, 65 (1989), 12; 4759-4762 doi:10.1063/1.343229 (međunarodna recenzija, članak, znanstveni)
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Naslov
Influence of high-temperature thermal treatment on edge-defined film-fed growth silicon
Autori
Pivac, Branko ; Desnica, Uroš V.
Izvornik
Journal of applied physics (0021-8979) 65
(1989), 12;
4759-4762
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
annealing ; carbon ; crystal growth from melt ; elemental semiconductors ; heat treatment ; impurity-defect interactions ; oxygen ; silicon
Sažetak
Various polycrystalline silicon ribbons, grown with the edge-defined film-fed growth (EFG) technique, are annealed at the temperatures from 450 to 1250degreesC. The EFG ribbon growth technique introduces high C and O concentration which results in specific annealing behavior due to defect interactions. It is shown that oxygen in-diffusion during the crystal growth produces an oxygen-rich layer close to the surface of the ribbon, containing mostly SiOx agglomerates unstable at higher temperatures. Carbon concentration that exceeds the oxygen concentration causes a formation of high-temperature [C, O] complexes which could not be found in Si material with an inverted carbon-to-oxygen concentration ratio (25 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
