Pregled bibliografske jedinice broj: 319403
Factors influencing site selection of dopants in binary semiconductors
Factors influencing site selection of dopants in binary semiconductors // Solid state communications, 69 (1989), 4; 411-414 doi:10.1016/0038-1098(89)90698-4 (međunarodna recenzija, članak, znanstveni)
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Naslov
Factors influencing site selection of dopants in binary semiconductors
Autori
Desnica, Uroš V.
Izvornik
Solid state communications (0038-1098) 69
(1989), 4;
411-414
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
gallium compounds ; III-V semiconductors ; semiconductor doping
Sažetak
Enthalpies of substitutional incorporation of dopants in both sublattices of III-V compounds were analysed using Phillips-van Vechten's dielectric two band model. It has been shown that in the case of very large size mismatch between dopant and host atom, the consequent disorder of the crystal potential can be more important factor in dopant incorporation than the valence mismatch. Present calculations support recent experimental results on `antisite' incorporation of Sb in Ga site in GaN (8 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- INSPEC
