Naslov
Light-intensity dependence of slow-relaxation phenomena in semiinsulating GaAs

Autori
Desnica, Uroš ; Desnica, Dunja Ida ; Šantić, Branko

Izvornik
Applied Physics. A (0721-7250) 51 (1990), 5; 379-381

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
carrier relaxation time; electron traps; gallium arsenide; III-V semiconductors; optical saturable absorption; photoconductivity; radiation quenching

Sažetak
Quenching-only and quenching-enhancement phenomena in low-temperature photo-conductivity (PC) of SI GaAs have been studied as a function of light intensity for photons in 1.0-1.2 eV energy range. Quenching-only of PC occurs only at high light intensities (above 1014 photons/cm2s) and reflects well-known bleaching of EL2 defects. On the contrary, the quenching-enhancement effect can be observed only for several orders of magnitude lower light intensities and neither the quenching nor the enhancement part of low-temperature evolution of PC is directly connected with EL2 defects, but reflects the time evolution of the occupancy of deep traps other than EL2. It was also found that bleaching of EL2 is quite an inefficient process (15 References).

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA