Pregled bibliografske jedinice broj: 319392
Trap-induced photoconductivity in semiinsulating GaAs
Trap-induced photoconductivity in semiinsulating GaAs // Journal of applied physics, 67 (1990), 3; 1408-1411 doi:10.1063/1.345697 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 319392 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Trap-induced photoconductivity in semiinsulating GaAs
Autori
Desnica, Uroš ; Šantić, Branko
Izvornik
Journal of applied physics (0021-8979) 67
(1990), 3;
1408-1411
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
deep levels ; electron traps ; gallium arsenide ; hole traps ; III-V semiconductors ; photoconductivity
Sažetak
Photoconductivity of semiinsulating gallium arsenide illuminated with monochromatic photons in the 0.7-1.8 eV range has been studied. It has been found that photoconductivity strongly depends on the occupancy of deep traps present in the material, so that the photoconductivity measured for the full trap regime is several orders of magnitude larger than one taken when the traps are empty. By selective emptying or filling of traps it was possible to identify the contribution of each particular trap to the photoconductivity enhancement in different temperature intervals (9 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
