Pregled bibliografske jedinice broj: 319391
Time-evolution of low-temperature photoconductivity and Hall mobility in semi-insulating GaAs
Time-evolution of low-temperature photoconductivity and Hall mobility in semi-insulating GaAs // Applied Surface Science, 50 (1991), 1-4; 269-272 doi:10.1016/0169-4332(91)90179-N (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 319391 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Time-evolution of low-temperature photoconductivity and Hall mobility in semi-insulating GaAs
Autori
Desnica, Dunja Ida ; Šantić, Branko ; Desnica, Uroš V.
Izvornik
Applied Surface Science (0169-4332) 50
(1991), 1-4;
269-272
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
carrier mobility ; electron traps ; gallium arsenide ; Hall effect ; III-V semiconductors ; photoconductivity
Sažetak
The time-evolution of photo-Hall mobility, muH, during low-temperature illumination with 1.55 eV photons is presented as determined experimentally. At first muH decreases gradually during illumination, dropping almost to zero, and then increases back to high values, reaching an equilibrium value. The same behavior of mu H is predicted from calculations of time-evolutions of free electrons and holes, derived from the time-evolution of independently measured thermoelectric effect signal and photoconductivity. Results are compatible with the model in which the dynamics of trap filling and changes of relative occupancies of traps with different sign are responsible for transient phenomena observed in photoconductivity, Hall mobility and thermoelectric signal during low-temperature, low-intensity illumination (12 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
