Pregled bibliografske jedinice broj: 319389
On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers
On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers // Journal de Physique. III, 1 (1991), 9; 1481-1487 (međunarodna recenzija, članak, znanstveni)
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Naslov
On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers
Autori
Desnica, Uroš V. ; Petrović, Bojan G. ; Skowronski, Marek ; Cretella, M. C.
Izvornik
Journal de Physique. III (1155-4320) 1
(1991), 9;
1481-1487
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
deep levels; gallium arsenide; III-V semiconductors; light transmission
Sažetak
Different factors influencing the accuracy of quantitative EL2 mapping were analyzed. It was found that very often the main problem limiting precision of those measurements is fluctuations in the transmitted light due to surface, subsurface and volume imperfections of the wafer. This problem was solved by combining results of two sets of 2-dimensional scans taken at two different light energies ; one at 1.1 eV giving information on EL2degrees absorption, and the other, below 0.8 eV, giving the background transmissivity. It is shown that this low-energy light mapping of GaAs wafer can also be used for evaluation of GaAs wafer preparation techniques (12 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
