Pregled bibliografske jedinice broj: 319388
El2 related deep traps in semi-insulating GaAs
El2 related deep traps in semi-insulating GaAs // Applied physics letters, 58 (1991), 3; 278-280 doi:10.1063/1.104660 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 319388 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
El2 related deep traps in semi-insulating GaAs
Autori
Desnica, Uroš ; Desnica, Dunja Ida ; Šantić, Branko
Izvornik
Applied physics letters (0003-6951) 58
(1991), 3;
278-280
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
deep levels ; gallium arsenide ; III-V semiconductors ; radiation quenching ; thermally stimulated currents
Sažetak
Processes induced by below-the-gap illumination and related to defects having deep levels in liquid-encapsulated Czochralski semi-insulating GaAs crystals were studied. It was found that the dynamics of both optical quenching and thermal recovery (above 125 K) of thermally stimulated current signal related to six deep traps was the same as that of the EL2 related photoconductivity signals. Analysis of these results gives evidence that some of the observed deep traps in GaAs are complex defects, which might include as their constituent the EL2 defect. It means that EL2 could serve as a gettering center for other native defects and/or impurities. The proposed model is in accordance with other recently published results associating several deep traps (EL6, EL3, EL5, and EL14) with EL2 (29 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
