Pregled bibliografske jedinice broj: 319382
EL2 defect metastability-related transients revisited
EL2 defect metastability-related transients revisited // Japanese journal of applied physics, 34 (1995), 11; 5922-5925 doi:10.1143/JJAP.34.5922 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 319382 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
EL2 defect metastability-related transients revisited
Autori
Radić, Nikola ; Šantić, Branko ; Desnica, Uroš V.
Izvornik
Japanese journal of applied physics (0021-4922) 34
(1995), 11;
5922-5925
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
deep levels ; defect absorption spectra ; defect states ; electron traps ; gallium arsenide ; III-V semiconductors ; paramagnetic resonance ; photocapacitance
Sažetak
Closed-type solutions of the basic model for photoinduced metastable transformation of the EL2 centers in SI GaAs are studied. Conditions for the existence of maximum in the optical absorption a, photocapacitance Cd, and electron paramagnetic resonance (EPR) transients are determined. Several methods for the estimation of the initial neutral EL2 fraction (occupancy f), and cross-section for the metastable transformation sigma* from the dynamics of "fingerprint" transients are proposed, and the accompanying ready-to-use nomograms computed and presented (18 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
