Pregled bibliografske jedinice broj: 319267
Defects in CdS: In detected by perturbed angular correlation spectroscopy (PAC)
Defects in CdS: In detected by perturbed angular correlation spectroscopy (PAC) // Applied Surface Science, 50 (1991), 1-4; 159-164 doi:10.1016/0169-4332(91)90156-E (međunarodna recenzija, članak, znanstveni)
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Naslov
Defects in CdS: In detected by perturbed angular correlation spectroscopy (PAC)
Autori
Magerle, Robert ; Deicher, Manfred ; Desnica, Uroš ; Keller, R. ; Pfeiffer, Walter ; Pleiter, F. ; Skudlik, H. ; Wichert, Thomas
Izvornik
Applied Surface Science (0169-4332) 50
(1991), 1-4;
159-164
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
annealing ; cadmium compounds ; charge compensation ; II-VI semiconductors ; impurity-vacancy interactions ; indium ; ion implantation
Sažetak
The local lattice environment of the donor In in CdS is investigated measuring the electric-field gradient at the site of the radioactive probe atom 111In by the perturbed gammagamma angular correlation technique. It is shown that implantation of In into CdS with subsequent annealing drives 100% of the In atoms to Cd lattice sites. Diffusion of In into CdS under S overpressure results in the formation of InCd-VCd pairs which seem to be responsible for the self-compensation of In donors in CdS (12 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
