Pregled bibliografske jedinice broj: 319264
The analysis of low-temperature photoconductivity evolution in semi-insulating GaAs
The analysis of low-temperature photoconductivity evolution in semi-insulating GaAs // Journal of Physics : Condensed Matter, 3 (1991), 31; 5817-5824 (međunarodna recenzija, članak, znanstveni)
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Naslov
The analysis of low-temperature photoconductivity evolution in semi-insulating GaAs
Autori
Desnica, Uroš ; Desnica, Dunja Ida ; Šantić, Branko
Izvornik
Journal of Physics : Condensed Matter (0953-8984) 3
(1991), 31;
5817-5824
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
semiconductors; slow relaxation; low-temperature photoconductivity; free electron concentration; free hole concentration; thermoelectric effect; illumination; photo-Hall mobility; trapping rates; photogenerated free electrons; deep traps; GaAs
Sažetak
A peculiar slow relaxation of low-temperature photoconductivity in semi-insulating GaAs is analysed. Time evolutions of free electron concentration, n, and free hole concentration, p, are determined from independently measured photoconductivity and current due to the thermoelectric effect. It is shown that during low-temperature illumination the p/n ratio at first rises significantly and then decreases back towards the initial, low value. The same behaviour is obtained from a study of time evolution of photo-Hall mobility measured independently. Results are analysed and explained in terms of different trapping rates of photogenerated free electrons and holes by deep traps (15 References)
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus