Naslov
Trapping and Recombination Processes via Deep Level T3 in Semi-Insulating Gallium Arsenide

Autori
Desnica, Uroš ; Šantić, Branko ; Desnica, Dunja ; Pavlović, Mladen

Izvornik
Journal of Electronic Materials (0361-5235) 22 (1993); 403-407

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
trapping; recombination; deep levels; semi-insulating gallium arsenide

Sažetak
Trapping and recombination of free carriers by deep level T3 has been studied. Occupancy of the level by electrons and dynamics of its filling and emptying as a function of illumination with monoenergetic photons in 0.69-1.55 eV range has been monitored by the thermally stimulated currents method. The authors have found that level T3 behaves more like a recombination center than like an ordinary electron trap. Besides trapping free electrons from conduction band, this trap can also communicate with valence band, trapping holes. The capture cross section for trapping a hole is estimated to be comparable or even larger than the capture cross section for trapping an electron. However, in many experimental conditions free electrons are generated more abundantly than free holes, and free carrier mobility and thermal velocity are both much higher for electrons than for holes. Therefore, electron trapping often prevails, so that this frequently detected defect, has been up to now most often perceived as a deep electron trap (26 References).

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA