Pregled bibliografske jedinice broj: 319227
Defects Agreggates in Silicon
Defects Agreggates in Silicon // Microscopic Identification of Electronic Defects in Semiconductors / Johnson, N.M. ; Bishop, S. ; Watkins, G.D. (ur.).
Pittsburgh (PA): Materials Research Society, 1985. str. 243-255
CROSBI ID: 319227 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Defects Agreggates in Silicon
Autori
Corbett, J.W. ; Corelli, J. ; Desnica, Uroš ; Snyder, L.C.
Vrsta, podvrsta i kategorija rada
Poglavlja u knjigama, znanstveni
Knjiga
Microscopic Identification of Electronic Defects in Semiconductors
Urednik/ci
Johnson, N.M. ; Bishop, S. ; Watkins, G.D.
Izdavač
Materials Research Society
Grad
Pittsburgh (PA)
Godina
1985
Raspon stranica
243-255
ISBN
0-553-57777-8
Ključne riječi
Defects, semiconductors, computer simulation, microscopic identification
Sažetak
In this brief review we consider the vacancy-related, the vacancy-oxigen-related and the vacancy-hydrogen related defects. We note the common oportunity for chemically-driven partial disociation of defects.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
