Pregled bibliografske jedinice broj: 318604
Morphology of the implantation-induced disorder in GaAs
Morphology of the implantation-induced disorder in GaAs // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120 (1996), 1-4; 236-239 doi:10.1016/S0168-583X(96)00516-2 (međunarodna recenzija, članak, znanstveni)
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Naslov
Morphology of the implantation-induced disorder in GaAs
Autori
Desnica, Uroš V. ; Desnica, Ida Dunja ; Ivanda, Mile ; Haynes, T. E.
Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 120
(1996), 1-4;
236-239
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
implantation ; disorder ; GaAs ; Raman spectroscopy
Sažetak
Disorder is introduced into GaAs by implantation oi Si-30(+) ions, using a very wide range of ion doses, and studied by Raman scattering (RS) and Rutherford backscattering and ion channeling (RES). A comparative analysis of mechanisms influencing RS and RES signals has been made. This analysis revealed that, due to different sensitivity of each method to various defect structures, it is possible to distinguish several different types of implantation induced disorder. RS results indicate that a second type of amorphous structure. having medium-range order, grows at the expense of the continuous-random- network structure, even at doses beyond the threshold for complete amorphization.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
