Naslov
Radiation effects on porous silicon

Autori
Pivac, Branko ; Rakvin, Boris, Pavesi, L.

Izvornik
Journal of Luminescence (0022-2313) 57 (1993), 1-6; 227-229

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
ESR; paramagnetic center; defects; porous materials; dangling bonds; physical radiation effects; gamma radiation; hydrogen additions; interfaces; experimental study; silicon

Sažetak
Electron spin resonance (ESR) was used to study paramagnetic defects in porous silicon. Two defects have been observed: (a) the P[bo] center which exists at the interface between the pore walls and an oxidized layer (with the same asymmetry characteristic of similar defects found at the Si/SiO[2] interface), and (b) dangling bonds with a symmetric lineshape, chich suggests the presence of an amorphous layer. Irradiation of porous silicon with γ -rays enhanced slightly the concentration of P[bo] centers but it did not introduce significant amount of E' centers as expected

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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