Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 305649

Vertical silicon-on-nothing FET: analytical model of subthreshold slope


Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav
Vertical silicon-on-nothing FET: analytical model of subthreshold slope // 43rd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON ELECTRONIC TESTING / Trontelj, J. ; Novak, F. ; Šorli, I. (ur.).
Ljubljana: Society for Microelectronics, Electronic Components and Materials (MIDEM), 2007. str. 71-74 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


CROSBI ID: 305649 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Vertical silicon-on-nothing FET: analytical model of subthreshold slope

Autori
Sviličić, Boris ; Jovanović, Vladimir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
43rd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON ELECTRONIC TESTING / Trontelj, J. ; Novak, F. ; Šorli, I. - Ljubljana : Society for Microelectronics, Electronic Components and Materials (MIDEM), 2007, 71-74

Skup
43rd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON ELECTRONIC TESTING

Mjesto i datum
Bled, Slovenija, 12.07.2007. - 14.07.2007

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
subtreshold slope; silicon-on-nothing; vertical FET

Sažetak
Analytical model of subtreshold slope for Vertical Fully-Depleted Silicon-On-Nothing FET is developed. The analytical model is based on the captive model in subtreshold region. The voltage-doping transformation is used for modeling short-channel effects. The analyrical model has been verified by comparing the calculated values with the two-dimensional numerical device simulator results obtained by Medici. The developed model fits the Medici results.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb


Citiraj ovu publikaciju:

Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav
Vertical silicon-on-nothing FET: analytical model of subthreshold slope // 43rd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON ELECTRONIC TESTING / Trontelj, J. ; Novak, F. ; Šorli, I. (ur.).
Ljubljana: Society for Microelectronics, Electronic Components and Materials (MIDEM), 2007. str. 71-74 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Sviličić, B., Jovanović, V. & Suligoj, T. (2007) Vertical silicon-on-nothing FET: analytical model of subthreshold slope. U: Trontelj, J., Novak, F. & Šorli, I. (ur.)43rd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON ELECTRONIC TESTING.
@article{article, author = {Svili\v{c}i\'{c}, Boris and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2007}, pages = {71-74}, keywords = {subtreshold slope, silicon-on-nothing, vertical FET}, title = {Vertical silicon-on-nothing FET: analytical model of subthreshold slope}, keyword = {subtreshold slope, silicon-on-nothing, vertical FET}, publisher = {Society for Microelectronics, Electronic Components and Materials (MIDEM)}, publisherplace = {Bled, Slovenija} }
@article{article, author = {Svili\v{c}i\'{c}, Boris and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2007}, pages = {71-74}, keywords = {subtreshold slope, silicon-on-nothing, vertical FET}, title = {Vertical silicon-on-nothing FET: analytical model of subthreshold slope}, keyword = {subtreshold slope, silicon-on-nothing, vertical FET}, publisher = {Society for Microelectronics, Electronic Components and Materials (MIDEM)}, publisherplace = {Bled, Slovenija} }




Contrast
Increase Font
Decrease Font
Dyslexic Font