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Pregled bibliografske jedinice broj: 305508

Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs

Poljak, Mirko; Biljanović, Petar; Suligoj, Tomislav
Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs // Proceedings of the 30th International Convention MIPRO 2007 / P. Biljanović, K. Skala (ur.).
Rijeka, 2007. str. 78-83 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 305508 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs

Autori
Poljak, Mirko ; Biljanović, Petar ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 30th International Convention MIPRO 2007 / P. Biljanović, K. Skala - Rijeka, 2007, 78-83

Skup
International Convention MIPRO

Mjesto i datum
Opatija, Hrvatska, 21.05.2007. - 25.05.2007

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
quantum effects; 2D model; double-gate; MOSFET

Sažetak
Quantum-mechanical phenomena in sub-50 nanometer double-gate MOSFETs are theoretically considered by a wavefunction approach and Non-Equilibrium Green's Function (NEGF) model was used in the simulations. Simulation results indicate that the classical models are not adequate for the realistic optimization of double-gate MOSFETs. Lateral quantum effects decrease the on-state current by up to 9, 4% in sub-50 nm devices so at least a 2D quantum mechanical simulation is needed in order to predict double-gate transistors characteristics in sub-50 nanometer region.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Petar Biljanović (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Mirko Poljak (autor)

Citiraj ovu publikaciju:

Poljak, Mirko; Biljanović, Petar; Suligoj, Tomislav
Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs // Proceedings of the 30th International Convention MIPRO 2007 / P. Biljanović, K. Skala (ur.).
Rijeka, 2007. str. 78-83 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Poljak, M., Biljanović, P. & Suligoj, T. (2007) Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs. U: P. Biljanović, K. (ur.)Proceedings of the 30th International Convention MIPRO 2007.
@article{article, author = {Poljak, Mirko and Biljanovi\'{c}, Petar and Suligoj, Tomislav}, editor = {P. Biljanovi\'{c}, K.}, year = {2007}, pages = {78-83}, keywords = {quantum effects, 2D model, double-gate, MOSFET}, title = {Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs}, keyword = {quantum effects, 2D model, double-gate, MOSFET}, publisherplace = {Opatija, Hrvatska} }
@article{article, author = {Poljak, Mirko and Biljanovi\'{c}, Petar and Suligoj, Tomislav}, editor = {P. Biljanovi\'{c}, K.}, year = {2007}, pages = {78-83}, keywords = {quantum effects, 2D model, double-gate, MOSFET}, title = {Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs}, keyword = {quantum effects, 2D model, double-gate, MOSFET}, publisherplace = {Opatija, Hrvatska} }

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