Pregled bibliografske jedinice broj: 304952
Revealing the radiation-induced effects in silicon by processing at enhanced temperatures– pressures
Revealing the radiation-induced effects in silicon by processing at enhanced temperatures– pressures // Radiation measurements, 42 (2007), 4-5; 688-692 doi:10.1016/j.radmeas.2007.01.085 (međunarodna recenzija, članak, znanstveni)
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Naslov
Revealing the radiation-induced effects in silicon by processing at enhanced temperatures– pressures
Autori
Misiuk, A. ; Surma, B. ; Bak-Misiuk, J. ; Londos, C.A. ; Vagovič, P. ; Kovačević, Ivana ; Pivac, Branko ; Jung, W. ; Prujszcyk, M.
Izvornik
Radiation measurements (1350-4487) 42
(2007), 4-5;
688-692
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Czochralski silicon ; irradiation ; microstructure ; hydrostatic pressure
Sažetak
Effect of processing at up to 1400K under Ar hydrostatic pressure (HP) equal to 1.1 GPa for oxygen-containing Czochralski grown silicon (Cz-Si) irradiated with neutrons (energy E =5 MeV, dose D =1×1017 cm− 2) or -rays (E =1.2 MeV, D =1000 Mrad) on oxygen clustering and precipitation has been investigated by electrical, X-ray, infrared absorption, and photoluminescence methods. Depending on irradiation conditions, processing of irradiated Cz-Si, especially under HP, results in creation of oxygen-containing defects. Such processing of irradiated Cz-Si is helpful for revealing its irradiation-related history.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
MZOS-098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
- MEDLINE