Naslov
Si nanocrystals in SiO2 films analyzed by small angle X-ray scattering

Autori
Bernstorff, Sigrid ; Dubček, Pavo ; Kovačević, Ivana ; Radić, Nikola ; Pivac, Branko ;

Izvornik
Thin Solid Films (0040-6090) 515 (2007), 14; 5637-5640

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Si nanostructures; SiO/SiO2 amorphous superlattice; Small angle X-ray scattering

Sažetak
Amorphous SiO/SiO2 multilayers were studied using grazing-incidence small-angle X-ray scattering (GISAXS). Such SiO/SiO2 superlattices were prepared by alternately magnetron sputtering of 3 nm thin films of SiO and 3 nm of SiO2 (10 layers each) on Si (100) substrate. Rotation of the Si substrate during evaporation ensures the homogeneity of the films over the whole substrate. After evaporation the samples were annealed at 1050 °C for 2 h in vacuum or in air. The analysis of the 2D GISAXS pattern has shown that Si nanocrystals are formed in the annealed samples. Using a Guinier approximation, the inter-nanocrystal distance (10.5 nm) and radius of gyration (2.3 nm) have been obtained for the samples annealed in vacuum. Samples annealed in air have shown similar peak values which were however, much wider distributed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA