Pregled bibliografske jedinice broj: 29424
U doping effects in (Ce1-xUx)NiSn
U doping effects in (Ce1-xUx)NiSn // Physical review. B, Condensed matter and materials physics, 57 (1998), 21; 13706-13711 doi:10.1103/PhysRevB.57.13706 (međunarodna recenzija, članak, znanstveni)
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Naslov
U doping effects in (Ce1-xUx)NiSn
Autori
Park, Je-Geun ; Očko, Miroslav ; Mcewen, K.A
Izvornik
Physical review. B, Condensed matter and materials physics (1098-0121) 57
(1998), 21;
13706-13711
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
CeNiSn ; semiconductor ; antiferromagnetic correlations ; energy gap ; thermopower
Sažetak
We have studied (Ce1-xUx)NiSn for 0 less than or equal to x less than or equal to 0.2 to investigate the effects of U doping on the low-temperature anomalies seen in CeNiSn. From resistivity and thermopower results, we conclude that with as small as 1.6% U doping the anomalies disappear. With further increasing U concentrations, the system becomes unstable towards a weakly antiferromagnetic transition. We discuss the effects due to small U doping at low temperatures in the light of chemical pressure effects and Fermi-level tuning.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
