Naslov
Characterization of InGaAs/InAlAs Separate Absorption and Multiplication Layers (SAM) Avalanche Photodiodes (APD) for Geiger Mode Operation

Autori
Compton, Madison ; Huntington, Andrew ; Pejčinović, Branimir ; Williams, George

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MEET and HGS, vol. I, 29th Intl. Convention MIPRO 2006 / Biljanović, Petar ; Skala, Karolj (ur.). - Rijeka : MIPRO , 2006. / - , 2006

Skup
29th Internation Convention MIPRO 2006

Mjesto i datum
Opatija, Hrvatska, 22.05.2006. - 26.05.2006

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Avalanche photodetectors; separate absorption and multiplication; Geiger mode

Sažetak
InGaAs/InAlAs SAM APDs are characterized with the purpose of using these devices as single photon avalanche diodes (SPAD). Typical gains for these devices in linear mode are shown to approach 40. Sidewall leakage, due to the exposed mesa structure of the device, is limited with the application of a dielectric, and shown to be insignificant. Dark current, with respect to bias at a gain of 10, was shown to be below 1nA when cooled below 273K, and thus would be well suited for Geiger mode operation.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA