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Pregled bibliografske jedinice broj: 256705

Growth of Ge islands on Si substrates

Radić, Nikola; Pivac, Branko; Dubček, Pavo; Kovačević, Ivana; Bernstorff, Sigrid;
Growth of Ge islands on Si substrates // Thin solid films, 515 (2006), 2; 752-755 doi:10.1016/j.tsf.2005.12.198 (međunarodna recenzija, članak, znanstveni)

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Naslov
Growth of Ge islands on Si substrates

Autori
Radić, Nikola ; Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, Sigrid ;

Izvornik
Thin solid films (0040-6090) 515 (2006), 2; 752-755

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge nanostructures ; small angle X-ray scattering ; atomic force microscopy

Sažetak
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy. Samples were prepared by magnetron sputtering of a 5 nm thick Ge layer in a very high-vacuum on Si(100) substrate held at different temperatures. The vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. The optimum temperature for the islands formation was 650°C. At this temperature islands grow in conical shape with very similar dimensions, however, inter-island distances varied significantly.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Projekti:
0098021
0098020

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Nikola Radić (autor)

Avatar Url Branko Pivac (autor)

Avatar Url Pavo Dubček (autor)

Avatar Url Ivana Capan (autor)

Poveznice na cjeloviti tekst rada:

doi www.sciencedirect.com

Citiraj ovu publikaciju:

Radić, Nikola; Pivac, Branko; Dubček, Pavo; Kovačević, Ivana; Bernstorff, Sigrid;
Growth of Ge islands on Si substrates // Thin solid films, 515 (2006), 2; 752-755 doi:10.1016/j.tsf.2005.12.198 (međunarodna recenzija, članak, znanstveni)
Radić, N., Pivac, B., Dubček, P., Kovačević, I., Bernstorff, S. & (2006) Growth of Ge islands on Si substrates. Thin solid films, 515 (2), 752-755 doi:10.1016/j.tsf.2005.12.198.
@article{article, author = {Radi\'{c}, Nikola and Pivac, Branko and Dub\v{c}ek, Pavo and Kova\v{c}evi\'{c}, Ivana and Bernstorff, Sigrid}, year = {2006}, pages = {752-755}, DOI = {10.1016/j.tsf.2005.12.198}, keywords = {Ge nanostructures, small angle X-ray scattering, atomic force microscopy}, journal = {Thin solid films}, doi = {10.1016/j.tsf.2005.12.198}, volume = {515}, number = {2}, issn = {0040-6090}, title = {Growth of Ge islands on Si substrates}, keyword = {Ge nanostructures, small angle X-ray scattering, atomic force microscopy} }
@article{article, author = {Radi\'{c}, Nikola and Pivac, Branko and Dub\v{c}ek, Pavo and Kova\v{c}evi\'{c}, Ivana and Bernstorff, Sigrid}, year = {2006}, pages = {752-755}, DOI = {10.1016/j.tsf.2005.12.198}, keywords = {Ge nanostructures, small angle X-ray scattering, atomic force microscopy}, journal = {Thin solid films}, doi = {10.1016/j.tsf.2005.12.198}, volume = {515}, number = {2}, issn = {0040-6090}, title = {Growth of Ge islands on Si substrates}, keyword = {Ge nanostructures, small angle X-ray scattering, atomic force microscopy} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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