Pregled bibliografske jedinice broj: 256701
GISAXS study of Si nanocrystals formation in SiO2 thin films
GISAXS study of Si nanocrystals formation in SiO2 thin films // Thin solid films, 515 (2006), 2; 756-758 doi:10.1016/j.tsf.2005.12.192 (međunarodna recenzija, članak, znanstveni)
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Naslov
GISAXS study of Si nanocrystals formation in SiO2 thin films
Autori
Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, Sigrid
Izvornik
Thin solid films (0040-6090) 515
(2006), 2;
756-758
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Si nanostructures ; SiO/SiO2 amorphous superlattice ; small angle X-ray scattering
Sažetak
We present a study on amorphous SiO/SiO2 superlattice using grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) on Si(100) substrate. After the evaporation, samples were annealed at 1100 C for 1h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus