Pregled bibliografske jedinice broj: 253823
Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration
Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration // Physical Review B - Condensed Matter and Materials Physics, 76 (2007), 134; 132504-1 doi:10.1103/PhysRevB.76.132504 (međunarodna recenzija, članak, znanstveni)
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Naslov
Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration
Autori
Sipos, B. ; Barišić, Neven ; Gaal, R ; Forró, L. ; Krapinski, J. ; Rullier-Albenque, F.
Izvornik
Physical Review B - Condensed Matter and Materials Physics (1098-0121) 76
(2007), 134;
132504-1
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
MgB(2); Matthiessen's rule
Sažetak
We present the results of a systematic study of the temperature-dependent resistivity and of T(c) of a single crystal MgB(2) sample as a function of point defect concentration. We have found linear, albeit weak, correlation between the decreasing superconducting critical temperature and the residual resistivity and no variation of the slope of the rho(T) curve at high temperature. These findings reinforce the already existing picture of s-wave pairing for the superconductivity. The interband scattering is low despite increasing disorder. Somewhat surprisingly, Matthiessen's rule is followed even in this two-band metal.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
