Naslov
Comparison of DC, RF, and Dispersion Properties of SOI and Strained-SOI N-MOSFETs

Autori
Wong, Phillip K. ; Pejčinović, Branimir ; Lee, Jong-Jan ; Hsu, Sheng T. ;

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the IEEE Int'l Symposium on Industrial Electronics, ISIE 2005 / - , 2005, 1155-1158

Skup
IEEE Int'l Symposium on Industrial Electronics, ISIE 2005

Mjesto i datum
Dubrovnik, Hrvatska, 20.06.2005. - 23.06.2005

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
strained-silicon; silicon on insulator; RF characterization; self-heating effect

Sažetak
The operating performance of SOI and strained- SOI N-MOSFETs are compared. In particular, these properties are examined in detail: 1) electron mobility and DC characteristics, 2) high frequency behavior, 3) dispersion and self-heating effects, and 4) buried oxide interface trap density. Our results demonstrate that SSOI technology can improve ft and fmax conservatively by up to 50% without excessive dispersion/self-heating. Furthermore, measurements indicate that the SSOI wafer bonding process can produce an acceptable buried oxide interface trap density.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA