Pregled bibliografske jedinice broj: 251044
Scaling of the Exclusion/Extraction InSb MOSFETs
Scaling of the Exclusion/Extraction InSb MOSFETs // International Conference on Applied Electromagnetics and Communications (ICECom 2005)
Dubrovnik, Hrvatska, 2005. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 251044 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Scaling of the Exclusion/Extraction InSb MOSFETs
Autori
Sijerčić, Edin ; Pejčinović, Branimir
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
International Conference on Applied Electromagnetics and Communications (ICECom 2005)
/ - , 2005
Skup
International Conference on Applied Electromagnetics and Communications (ICECom)
Mjesto i datum
Dubrovnik, Hrvatska, 12.10.2005. - 14.10.2005
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
InSb; MOSFET; scaling; drift-diffusion simulation
Sažetak
A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for THz active devices operating at very low voltages. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.150 m are analyzed.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
0036027
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Branimir Pejčinović
(autor)
