Pregled bibliografske jedinice broj: 251041
Simulation of InSb Devices Using Drift-Diffusion Equations
Simulation of InSb Devices Using Drift-Diffusion Equations // Solid-State Electronics, 49 (2005), 1414-1421 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 251041 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Simulation of InSb Devices Using Drift-Diffusion Equations
Autori
Sijerčić, Edin ; Mueller, Kurt ; Pejčinović, Branimir
Izvornik
Solid-State Electronics (0038-1101) 49
(2005);
1414-1421
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
InSb; Photodiodes; Auger recombination; Drift– diffusion simulation
Sažetak
A methodology for simulation of InSb devices in commercial drift– diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of low leakage, room temperature InSb photodiodes.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
0036027
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Branimir Pejčinović
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus