Pregled bibliografske jedinice broj: 249857
A GISAXS study of SiO/SiO2 superlattice
A GISAXS study of SiO/SiO2 superlattice // Thin solid films, 511-512 (2006), 463-467 doi:10.1016/j.tsf.2005.12.028 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 249857 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
A GISAXS study of SiO/SiO2 superlattice
Autori
Kovačević, Ivana ; Pivac, Branko ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, S. ; Slaoui, A.
Izvornik
Thin solid films (0040-6090) 511-512
(2006);
463-467
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon ; nanostructures ; SiO/SiO2 superlattice ; solar cells ; grazing incidence small angle X-ray scattering
Sažetak
We present a structural analysis of Ge islands on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). GISAXS is a nondestructive and powerful technique for structural characterization of islands fabricated on a substrate. From the GISAXS pattern it is possible to determine the size, the shape, the inter-island distance and the size distribution of islands. In this work, the samples were prepared with high-vacuum evaporation of a 10nm thick Ge layer on Si(100) substrate heated at 200 C. The samples were annealed at 500 - 700 °C for 1h in vacuum, yielding to island formation. The implementation of such Ge islands into silicon solar cells is proposed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus