Pregled bibliografske jedinice broj: 245318
Low Emittance Gun Based on Field Emission
Low Emittance Gun Based on Field Emission // Proceedings of the 26th International Free Electron Laser Conference & 11th FEL Users Workshop / Bakker, Rene ; Giannessi, Luca ; Marsi ; Marino ; Walker, Richard (ur.).
Trst, 2004. str. 602-605 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Low Emittance Gun Based on Field Emission
Autori
Ganter, Romain ; Raguin, Jean-Yves ; Candel, A. ; Dehler, Micha ; Gobrecht, Jens ; Gough, Christopher ; Ingold, Gerhard ; Leemann, Simon C. ; Li, K. ; Paraliev, Martin Lubenov ; Pedrozzi, Marco ; Rivkin, Leonid ; Sehr, Harald ; Schlott, Volker ; Streun, Andreas ; Wrulich, Albin ; Zelenika, Saša
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 26th International Free Electron Laser Conference & 11th FEL Users Workshop
/ Bakker, Rene ; Giannessi, Luca ; Marsi ; Marino ; Walker, Richard - Trst, 2004, 602-605
Skup
26th International Free Electron Laser Conference & 11th FEL Users Workshop
Mjesto i datum
Trst, Italija, 29.08.2004. - 03.09.2004
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
electron gun; low emittance; field emitter arrays; high-gradient acceleration
Sažetak
The design of an electron gun capable of producing beam emittance one order of magnitude lower than current technology would reduce considerably the cost and size of a free electron laser radiating at 0.1 nm. Field emitter arrays (FEAs) including a gate and a focusing layer are an attractive technology for such high brightness sources. Electrons are extracted from micrometric tips thanks to voltage pulses applied between the gate and the tips. The focusing layer should then reduce the initial divergence of each emitted beamlet. This FEA will be inserted in a high-gradient diode configuration couplesd with a radiofrequency (RF) structure. In the diode part the high electric field (several hundreds of MV/m) will limit the degradation of emittance due to space-charge effects. The first acceleration will be obtained with high voltage pulses (about one megavolt in a few hundreds of nanoseconds) synchronized with the low voltage pulses applied to the FEA (200-300 V in less than one nanosecond at a frequency lower than a kilohertz). This diode part will then be followed by an RF accelerating structure in order to bring the electrons to relativistic energies.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Strojarstvo, Temeljne tehničke znanosti