Pregled bibliografske jedinice broj: 235396
InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror
InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror // Physica status solidi. A, Applied research, 201 (2004), 12; 2675-2678 doi:10.1002/pssa.200405042 (podatak o recenziji nije dostupan, kratko priopcenje, znanstveni)
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Naslov
InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror
Autori
Dorsaz, J. ; Carlin, J. F. ; Zellweger, C. M. ; Gradečak, S. ; Ilegems, M.
Izvornik
Physica status solidi. A, Applied research (0031-8965) 201
(2004), 12;
2675-2678
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, kratko priopcenje, znanstveni
Ključne riječi
GaN ; Bragg refectors ; MOCVD ; light emitting diodes
Sažetak
We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A1-xInxN layers with an Al content around x 0.17 are lattice matched to GaN, thus avoiding strain-related issues in the subsequent active layers while keeping a high refractive index contrast of 7%, comparable to that achievable in the Al0.5Ga0.5N/GaN system. Devices exhibit clear resonant-cavity effects, improved directionality in the radiation pattern and achieve an optical output of 1.7 mW and 2.6% external quantum efficiency at 20 mA.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- INSPEC
