Pregled bibliografske jedinice broj: 235386
Microscopic evidence of point defect incorporation in laterally overgrown GaN
Microscopic evidence of point defect incorporation in laterally overgrown GaN // Applied Physics Letters, 80 (2002), 2866-2868 (međunarodna recenzija, članak, znanstveni)
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Naslov
Microscopic evidence of point defect incorporation in laterally overgrown GaN
Autori
Gradečak, Silvija ; Wagner, Volker ; Ilegems, Marc ; Riemann, Thomas ; Christen, Jurgen ; Stadelmann, Pierre
Izvornik
Applied Physics Letters (0003-6951) 80
(2002);
2866-2868
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
GaN; ELO; point defects; electron microscopy
Sažetak
Electron microscopy techniques are applied to investigate structural and optical properties of GaN layers selectively grown by hydride vapor phase epitaxy on crystalline GaN seed layers deposited on (0001)Al2O3 substrates. Regions with different optical properties are observed in the cross- sections of the layers. They are defined by the crystallographic planes that serve as growth facets. We give a simple geometrical explanation of point defect incorporation occurring more easily for the {; ; 112-bar 2}; ; GaN than for the {; ; 0001}; ; GaN growth facets. Microscopic evidences supporting the model are higher concentrations of point-like defects and local strain variations in laterally grown regions that are revealed by high-resolution electron microscopy.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
