Pregled bibliografske jedinice broj: 235384
Bending of dislocations in GaN during epitaxial lateral overgrowth
Bending of dislocations in GaN during epitaxial lateral overgrowth // Applied Physics Letters, 85 (2004), 4648-4650 (međunarodna recenzija, članak, znanstveni)
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Naslov
Bending of dislocations in GaN during epitaxial lateral overgrowth
Autori
Gradečak, SIlvija ; Stadelmann, Pierre, Wagner, Volker ; Ilegems, Marc
Izvornik
Applied Physics Letters (0003-6951) 85
(2004);
4648-4650
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
GaN; dislocations; ELO; electron microscopy
Sažetak
Bending of dislocations in GaN during epitaxial lateral overgrowth (ELO) has been experimentally studied using transmission electron microscopy. The orientational dependence of the dislocation energy factor K has been calculated on the basis of anisotropic elasticity theory for different types of perfect dislocation in GaN. Image forces act on dislocations during the growth and dislocations bend to achieve the minimum energy. Bending behavior depends on a dislocation type and we show that the measured bending angles correspond to the calculated energy minima. The results allow us to quantitatively discuss the most advantageous ELO GaN mask direction for the largest dislocation density reduction.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
