Pregled bibliografske jedinice broj: 214760
Doping effects on the low-energy excitations of the charge density wave system o-TaS3
Doping effects on the low-energy excitations of the charge density wave system o-TaS3 // Journal de physique. IV, 131 (2005), 191-192 doi:10.1051/jp4:2005131047 (podatak o recenziji nije dostupan, kongresno priopcenje, znanstveni)
CROSBI ID: 214760 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Doping effects on the low-energy excitations of the charge density wave system o-TaS3
Autori
Starešinić, Damir ; Biljaković, Katica ; Lunkenheimer, Peter ; Loidl, Alois ; Lasjaunias, Jean-Claude
Izvornik
Journal de physique. IV (1155-4339) 131
(2005);
191-192
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, kongresno priopcenje, znanstveni
Ključne riječi
charge density wave ; heat capacity ; dielectric response ; relaxations ; doping
Sažetak
We report on the effect of doping on the relaxational dynamics and the specific heat (Cp) of the charge density wave (CDW) system o-TaS3. Isoelectronic substitution of Ta atoms with 0.2%-0.5% of Nb suppresses the primary relaxation process responsible for the glass-like dielectric response of pure o-TaS3 but only slightly affects the secondary process as well as the low energy excitation (LEE) contribution to Cp. Our results show that the primary relaxation process is mainly due to long range deformations of the CDW, which are prevented by doping. The secondary process and the LEE contribution to Cp originate from local topological defects of the CDW still remaining in doped samples.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
