Pregled bibliografske jedinice broj: 214341
GISAXS STUDY OF Si NANOCRYSTALS FORMATION IN SIO2 THIN FILMS
GISAXS STUDY OF Si NANOCRYSTALS FORMATION IN SIO2 THIN FILMS // ICTF13/ACSIN8 Abstract Book / Karlsson, Ulf (ur.).
Stockholm: Swedish Vacuum Society, 2005. str. 133-133 (poster, međunarodna recenzija, sažetak, znanstveni)
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Naslov
GISAXS STUDY OF Si NANOCRYSTALS FORMATION IN SIO2 THIN FILMS
Autori
Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, Sigrid
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
ICTF13/ACSIN8 Abstract Book
/ Karlsson, Ulf - Stockholm : Swedish Vacuum Society, 2005, 133-133
Skup
13th International Congress on Thin Films/ 8th International Conference on Atomically Clean Surfaces, Interfaces and Nanostructures
Mjesto i datum
Stockholm, Švedska, 19.06.2005. - 23.06.2005
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Si nanocrystals; GISAXS
Sažetak
We present a study on amorphous SiO/SiO2 superlattice using grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) on Si(100) substrate. After the evaporation, samples were annealed at 1100 °C for 1h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
