Pregled bibliografske jedinice broj: 214303
Growth of Ge islands on Si substrates
Growth of Ge islands on Si substrates // ICTF13/ACSIN8 Abstract Book / Karlsson, Ulf (ur.).
Stockholm: Swedish vacuum Society, 2005. str. 57-57 (poster, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 214303 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Growth of Ge islands on Si substrates
Autori
Radić, Nikola ; Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, Sigrid
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
ICTF13/ACSIN8 Abstract Book
/ Karlsson, Ulf - Stockholm : Swedish vacuum Society, 2005, 57-57
Skup
13th International Congress on Thin Films/ 8th INternational Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
Mjesto i datum
Stockholm, Švedska, 19.06.2005. - 23.06.2005
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Ge islands; self-organization
Sažetak
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy. Samples were prepared by magnetron sputtering of a 5 nm thick Ge layer in a very high-vacuum on Si(100) substrate held at different temperatures. The vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. The optimum temperature for the islands formation was 650°C. At this temperature islands grow in conical shape with very similar dimensions, however, inter-island distances varied significantly.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
