Pregled bibliografske jedinice broj: 214230
A GISAXS study of SiO/SiO2 superlattice
A GISAXS study of SiO/SiO2 superlattice // E-MRS 2005 Spring Meeting Scientific Programme / Slaoui, Abdelilah ; Barbier, daniel ; Crean, Gabriel ; Martins, Rodrigo ; Habermeier, Hans-Ulrich (ur.).
Strasbourg: European Materials Research Society, 2005. str. F-17/21 (poster, međunarodna recenzija, sažetak, znanstveni)
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Naslov
A GISAXS study of SiO/SiO2 superlattice
Autori
Kovačević, Ivana ; Pivac, Branko ; Dubček, Dubček ; Radić, Nikola ; Bernstorff, Sigrid ; Slaoui, A.
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
E-MRS 2005 Spring Meeting Scientific Programme
/ Slaoui, Abdelilah ; Barbier, daniel ; Crean, Gabriel ; Martins, Rodrigo ; Habermeier, Hans-Ulrich - Strasbourg : European Materials Research Society, 2005, F-17/21
Skup
E-MRS 2005 Spring Meeting
Mjesto i datum
Strasbourg, Francuska, 31.05.2005. - 03.06.2005
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
SiO/SiO2; superlattice; GISAXS
Sažetak
We present a study on amorphous SiO/SiO2 superlattice using grazing-incidence small-angle X-ray scattering (GISAXS). From the 2D GISAXS pattern it is possible to determine the shape, size and inter-particle distance. Amorphous SiO/SiO2 superlattices were prepared by a high vacuum evaporation of a 2nm thin films of SiO and SiO2 (10 layers each) on Si (100) substrate. Rotation of the Si substrate during evaporation enables homogeneity of films over the whole substrate. After evaporation samples were annealed at 1050 °C and 1100 °C for 1h in vacuum. Analysis of the 2D GISAXS pattern has shown that Si nanocrystals are present in the annealed samples. Using a Guinier approximation, inter-nanocrystal distance (5 nm) and radius of gyration (1.5 nm) have been obtained.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
