Pregled bibliografske jedinice broj: 214209
Self-organized growth of Ge islands on Si(100) substrates
Self-organized growth of Ge islands on Si(100) substrates // E-MRS 2005 Spring Meeting Scientific Programme / Slaoui, Abdelilah ; Barbier, Daniel ; Crean, Gabriel ; Martins, Rodrigo ; Habermeier, Hans-Ulrich (ur.).
Strasbourg: European Materials Research Society, 2005. str. F-5/21 (poster, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 214209 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Self-organized growth of Ge islands on Si(100) substrates
Autori
Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, Sigrid ; Slaoui, A.
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
E-MRS 2005 Spring Meeting Scientific Programme
/ Slaoui, Abdelilah ; Barbier, Daniel ; Crean, Gabriel ; Martins, Rodrigo ; Habermeier, Hans-Ulrich - Strasbourg : European Materials Research Society, 2005, F-5/21
Skup
E-MRS 2005 Spring Meeting
Mjesto i datum
Strasbourg, Francuska, 31.05.2005. - 03.06.2005
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Ge islands; self-organization
Sažetak
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). Grazing incidence small angle X-ray scattering (GISAXS) as one of the nondestructive techniques is a powerful technique for structural characterization of islands supported on a substrate. From the GISAXS pattern it is possible to determine the size, the shape, inter-island distance and size distribution of islands. Samples were prepared by with two different techniques, namely, high-vacuum evaporation of a 5nm 10nm thick Ge layer on Si(100) substrate held at 200 °C. The samples were annealed at 700 °C for 1h in vacuum, yielding to island formation.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
