Pregled bibliografske jedinice broj: 214132
Magnetron sputtering growth of Ge islands on Si(100) substrates
Magnetron sputtering growth of Ge islands on Si(100) substrates // Proceedings of the First International Workshop on Semiconductor Nanocrystals, SEMINANO 2005, Vol 1 / Podor, Balint, Horvath, Zsolt J., Basa Peter (ur.).
Budimpešta: Hungarian Academy of Sciences (MTA), 2005. str. 91-93 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Magnetron sputtering growth of Ge islands on Si(100) substrates
Autori
Radić, Nikola ; Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, Sigrid
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the First International Workshop on Semiconductor Nanocrystals, SEMINANO 2005, Vol 1
/ Podor, Balint, Horvath, Zsolt J., Basa Peter - Budimpešta : Hungarian Academy of Sciences (MTA), 2005, 91-93
Skup
First International Workshop on Semiconductor Nanocrystals, SEMINANO 2005
Mjesto i datum
Budimpešta, Mađarska, 10.09.2005. - 12.09.2005
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Magnetron; sputtering; Ge islands
Sažetak
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy. Samples were prepared by magnetron sputtering of a 5 nm thick Ge layer in a very high-vacuum on Si(100) substrate held at different temperatures. The vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. The optimum temperature for the islands formation was 650°C. At this temperature islands grow in conical shape with very similar dimensions, however, inter-island distances varied significantly.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
