Pregled bibliografske jedinice broj: 204542
Study of ion induced damage in 4H-SiC
Study of ion induced damage in 4H-SiC // Materials science forum, 483 (2005), 389-392 doi:10.4028/www.scientific.net/MSF.483-485.389 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 204542 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Study of ion induced damage in 4H-SiC
Autori
Lo Giudice, A. ; Olivero, P. ; Fizzotti, F. ; Manfredotti, C. ; Vittone, E. ; Bianco, S. ; Bertuccio, G. ; Casiraghi, R. ; Jakšić, Milko
Izvornik
Materials science forum (0255-5476) 483
(2005);
389-392
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
4H silicon carbide ; ion beam induced charge collection ; radiation damage
Sažetak
The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
