Pregled bibliografske jedinice broj: 204319
Defects production in gamma irradiated silicon at different temperatures
Defects production in gamma irradiated silicon at different temperatures // Vacuum, 80 (2005), 1-3; 223-228 doi:10.1016/j.vacuum.2005.08.002 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 204319 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Defects production in gamma irradiated silicon at different temperatures
Autori
Kovačević, Ivana ; Pivac, Branko
Izvornik
Vacuum (0042-207X) 80
(2005), 1-3;
223-228
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon ; defects ; irradiation ; dlts
Sažetak
A deep level transient spectroscopy (DLTS) study of electrically active defects in g-irradiated, n-type, Czochralski grown silicon samples at different temperatures has been performed. It is shown that upon irradiation at low temperatures the migration of primary defects is very limited, resulting in formation of only vacancy-oxygen (VO) centres. At higher temperatures these centres continue to form but the profile of the peak suggests that complex clustering of primary defects around VO centres occurs, contributing to the stress in material. After irradiation at higher temperatures the vacancies become more mobile contributing to the formation of multivacancy-related defects. Besides formation of divacancies, a deep level at Ec-0.32 eV has been detected in the DLTS spectra. This level is identified as a divacancy-oxygen V2O complex.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
