Naslov
Structure of ion beam synthesized II-VI nanocrystals

Autori
Dubček, Pavo ; Desnica, Uroš ; Desnica-Franković, Dunja ; Bernstorff, Sigrid

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Semiconductor Nanocrystals : Proceedings of the 1th International Workshop on Semiconductor Nanocrystals / B. Podor, Zs. J. Horvath, P. Basa - Budimpešta : Magyar Todomanyos Akademia, 2005, 147-150

Skup
First International Workshop on Semiconductor Nanocrystals : SEMINANO 2005

Mjesto i datum
Budimpešta, Mađarska, 10.09.2005. - 12.09.2005

Vrsta sudjelovanja
Pozvano predavanje

Vrsta recenzije
Nije recenziran

Ključne riječi
Small Angle Scattering; II-VI semiconductors; nanocrystals

Sažetak
Structure of semiconductor compounds directly synthesized by ion implantation of large and equal doses of constituent atoms into the SiO2 substrate has been studied using grazing incidence small angle X-ray scattering (GISAXS). GISAXS data suggest the successful synthesis of CdS, CdTe and PbTe nanoparticles already during the process of ion implantation either at 300 K or at 77 K, while subsequent annealing at high temperature (up to 1273 K) results in the increase of nanoparticle size and of the fraction of fused atoms. Aparently a considerable fraction of implanted atoms synthesize into semiconductor clusters already during low-T implantation, although as amorphous aggregates. Upon annealingthese aggregates increase in size and transform into crystalline phase.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA