Pregled bibliografske jedinice broj: 194919
Influence of light impurities on dislocation-related deep levels in p-type silicon
Influence of light impurities on dislocation-related deep levels in p-type silicon // 12. Međunarodni sastanak Vakuumska znanost i tehnika : zbornik sažetaka / Radić, Nikola (ur.).
Zagreb, 2005. str. 27-27 (poster, domaća recenzija, sažetak, znanstveni)
CROSBI ID: 194919 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Influence of light impurities on dislocation-related deep levels in p-type silicon
Autori
Pivac, Branko ; Kovačević, Ivana
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
12. Međunarodni sastanak Vakuumska znanost i tehnika : zbornik sažetaka
/ Radić, Nikola - Zagreb, 2005, 27-27
Skup
12. Međunarodni sastanak Vakuumska znanost i tehnika
Mjesto i datum
Trakošćan, Hrvatska, 18.05.2005
Vrsta sudjelovanja
Poster
Vrsta recenzije
Domaća recenzija
Ključne riječi
silicon; point defects; irradiation; DLTS
Sažetak
Influence of light impurities on dislocation related deep levels in p-type silicon (FZ and EFG grown) has been investigated by infrared spectroscopy (IR) and deep level transient spectroscopy (DLTS). It is known that light impurites segregate at structural defects such as dislocations but it is still unclear what are the macroscopic effects, do light impurities electrically activate structural defects and can the role of carbon be distinguished? In this work we have shown that dislocations are effective traps for Si, carbon presence influences dislocation deep levels and that thermal treatment even at very low temperatures affects dislocations activity.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
