Pregled bibliografske jedinice broj: 19252
Influence of technological process on the initial and stabilized performance of a-Si:H large area modules
Influence of technological process on the initial and stabilized performance of a-Si:H large area modules // Proceedings of 2nd World Conference on Photovoltaic Solar Energy Conference / Schmid, J. ; Ossenbrick, H.A. ; Helm, P. ; Ehman, H. ; Dunlop, E.D. ; (ur.).
Beč: Joint Research Centre, European Commission, 1998. str. 987-989 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 19252 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Influence of technological process on the initial and stabilized performance of a-Si:H large area modules
Autori
Urli, Natko B.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of 2nd World Conference on Photovoltaic Solar Energy Conference
/ Schmid, J. ; Ossenbrick, H.A. ; Helm, P. ; Ehman, H. ; Dunlop, E.D. ; - Beč : Joint Research Centre, European Commission, 1998, 987-989
Skup
2nd World Conference on Photovoltaic Solar Energy Conversion
Mjesto i datum
Austrija, 06.07.1998. - 10.07.1998
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
solar cells; amorphous silicon
Sažetak
Long-term outdoor degradation experiments were undertaken with large-area p-i-n and tandem a-Si modules in open-circuit and load conditions. Modules were manufactured by different technological processes with or without the wide band gap graded buffer interface layer, or with medium hydrogen-diluted i-layer at 140° and 180°C. All modules reach an equilibrium state after 45 days of exposure. The best results have been obtained with hydrogen dilution with less than 8% decrease in effciency from the initial value.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
